全文链接://pubs.rsc.org/en/content/articlelanding/2020/cc/d0cc04377j#!divAbstract
摘要:Discrete ODMS-based LCs with variable numbers of siloxane repeating units and different lengths of the linking alkyl chain Si3-C4-Rod, Si7-C4-Rod, Si11-C4-Rod, and Si7-C8-Rod were synthesized. When the number of carbon atoms in the linking alkyl chain remains constant as 4, with the increase of the number of siloxane repeating units in ODMS, their self-assembled structure changes from Lam to Gyr, then to Colr. When the number of siloxane repeating units remains constant as 7, with the increase of the length of the linking alkyl chain, the self-assembled structure changes from Colr to Colh. For the Lam and columnar structures, their bulk assembled structures can be well transferred onto the thin films, and parallel-orientated supramolecular layers and columns with sub-5 nm line patterns can be obtained. However, the Gyr phase in bulk cannot be retained and is transformed to line patterns in thin films. The line width can be precisely regulated by the fraction of coil chains. These well-ordered line patterns can be further aligned in graphoepitaxial trenches.